Researchers from Wuhan University in China have developed ultrathin tunnelling junction (PUTJ) technology to address ...

Feb. 3, 2025 — Long-term exposure to PM2.5, PM10, NO2 and ozone (O3) air pollution is associated with more hospital admissions for lower respiratory tract ... Jan. 7, 2025 — If you like the ...

Future Electronics’ power system design laboratory, based in London, has implemented a SiC-MOSFET-based design for a 3-kW LLC power supply, which steps a nominal 390-VDC input down to a 49-VDC nominal ...

The 1200 V SiC MOSFETs with top-side cooling provide better cooling, easy setup, and reliable performance for industrial use and EV charging stations. Nexperia launches industry leading 1200 V SiC ...

Nexperia has launched a new series of highly efficient and durable industrial-grade 1200 V silicon carbide (SiC) MOSFETs, designed to deliver exceptional temperature stability. These devices feature ...

State Key Laboratory of Radio Frequency Heterogeneous Integration and Key Laboratory of Optoelectronic Devices and Systems, College of Physics and Optoelectronic Engineering, Shenzhen University, ...

1200V MaxSiC series SiC MOSFETs to take centre stage at Atlanta, Georgia conference Vishay Intertechnology has announced that its newly released 1200V MaxSiC SiC MOSFETs will take centre stage at the ...

The kinesin I family of motor proteins are crucial for axonal transport, but their roles in dendritic transport and postsynaptic function are not well-defined. Gene duplication and subsequent ...