SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.
NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...
From shielding to optimized vias, engineers can employ a number of commonly used approaches to reduce EMI in their designs.
The relay is capable of operating at ambient temperatures of up to 125ËšC, improving on previous iterations which were limited to ambient temperatures of 110ËšC. As a MOS FET relay, the device is ...
GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...
After hours: March 21 at 6:26:43 PM EDT Loading Chart for VSH ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results
Feedback