From shielding to optimized vias, engineers can employ a number of commonly used approaches to reduce EMI in their designs.

The relay is capable of operating at ambient temperatures of up to 125˚C, improving on previous iterations which were limited to ambient temperatures of 110˚C. As a MOS FET relay, the device is ...

NoMIS Power claims a breakthrough in the short-circuit withstand time of SiC MOSFETs; opens up new opportunities in high ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

Toshiba Electronics Europe GmbH has begun mass production of the AEC-Q100 qualified TB9103FTG MOSFET gate driver IC, featured in Toshiba’s recent motor control reference design for driving automotive ...

The IC supplies the flexibility to function as either a single-channel H-bridge or two half-bridge channels gate driver. When paired with an external MOSFET, it can replace mechanical relays, ...

It has a built-in charge pump circuit [4] that ensures voltage needed to power ... In addition to application as a motor ...

However, the limited and temperature-dependent Short-Circuit (SC) capability is the key obstacles to its wide application. In this paper, a novel SCP based on Power Evaluation Method (PEM) considering ...

Electric current generated when high dv/dt voltage is applied to capacitance between the drain and gate of a MOSFET or between the collector and gate of an IGBT. [2] The lower arm is the part that ...

Toshiba has announced a 600V super-junction mosfet with a maximum on-resistance of 24mΩ in ... The company has a G0 Spice model for circuit function verification, and a more accurate G2 Spice model ...